Rychlost Skrytý Dokument studna geox ocel Jednota Škeble
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PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
QUANTUM CONFINEMENT OF ABOVE-BAND-GAP TRANSITIONS IN Ge QUANTUM DOTS C. W. Teng*, J. F. Muth*, R. M. Kolbas*, K. M. Hassan**, A.
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers
PDF) Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures
Ge QDs in α-GeOx nano-films grown by two stage process based on Rf-magnetron sputtering | SpringerLink
PDF) Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers
Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers
Enhancing Plasmonic Spectral Tunability with Anomalous Material Dispersions Abstract
Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers
PDF) Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink